Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires
2018
Abstract
We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, while 90 degrees allows for the nanowire thinning, followed by the stable growth of ultra-thin tops. We develop a model that explains the observed morphological evolution under the two different scenarios.
Details
Title
Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires
Author(s)
Sokolovskii, A. S. ; Kim, W. ; Vukajlovic-Plestina, J. ; Tutuncuoglu, G. ; Francaviglia, L. ; Guniat, L. ; Potts, H. ; Friedl, M. ; Leran, J-B. ; Fontcuberta i Morral, A. ; Dubrovskii, V. G.
Published in
2018 International Conference Laser Optics (Iclo 2018)
Pages
412-412
Conference
International Conference on Laser Optics (ICLO), St Petersburg, RUSSIA, Jun 04-08, 2018
Date
2018-01-01
Publisher
New York, IEEE
ISBN
978-1-5386-3612-1
Other identifier(s)
View record in Web of Science
Laboratories
LMSC
Record Appears in
Scientific production and competences > STI - School of Engineering > IMX - Institute of Materials > LMSC - Laboratory of Semiconductor Materials
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2018-12-13