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research article
Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
Type
research article
Web of Science ID
WOS:000431452900018
Authors
Padilla, JL
•
Medina-Bailon, C
•
Alper, C
•
Gamiz, F
•
Ionescu, AM
Publication date
2018
Published in
Volume
112
Issue
18
Article Number
182101
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
November 8, 2018
Use this identifier to reference this record