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  4. Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part II: Total Charges and Transcapacitances
 
research article

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part II: Total Charges and Transcapacitances

Makris, Nikolaos
•
Jazaeri, Farzan
•
Sallese, Jean-Michel
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2018
IEEE Transactions on Electron Devices
  • Details
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Type
research article
DOI
10.1109/TED.2018.2838090
Web of Science ID

WOS:000435546700011

Author(s)
Makris, Nikolaos
Jazaeri, Farzan
Sallese, Jean-Michel
Bucher, Matthias
Date Issued

2018

Published in
IEEE Transactions on Electron Devices
Volume

65

Issue

7

Start page

2751

End page

2756

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
EDLAB  
Available on Infoscience
November 8, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/149973
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