Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy


Published in:
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 6, 1, 169-178
Year:
2018
Laboratories:




 Record created 2018-11-08, last modified 2018-12-03


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