Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities


Published in:
IEEE TRANSACTIONS ON ELECTRON DEVICES, 65, 1, 339-346
Year:
2018
Laboratories:




 Record created 2018-11-08, last modified 2018-12-03


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