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research article
A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI
Type
research article
Web of Science ID
WOS:000427578800008
Authors
Giterman, R
•
Fish, A
•
Burg, A
•
Teman, A
Publication date
2018
Volume
65
Issue
4
Start page
1245
End page
1256
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
November 8, 2018
Use this identifier to reference this record