Towards high-performance polarity-controllable FETs with 2D materials, 2018 Design

As scaling of conventional silicon-based electronics is reaching its ultimate limit, two-dimensional semiconducting materials of the transition-metal-dichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next-generation electronic devices. Fully relying on electrostatic doping, polarity-controllable devices, that use additional gate terminals to modulate the Schottky barriers at source and drain, can strongly take advantages of 2D materials to achieve high on/off ratio and low leakage floor. Here, we provide an overview of the latest advances in 2D material processes and growth. Then, we report on the experimental demonstration of polarity-controllable devices fabricated on 2D-WSe2 and study the scaling trends of such devices using ballistic self-consistent quantum simulations. Finally, we discuss the circuit-level opportunities of such technology.

Publié dans:
Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), 637-641
Présenté à:
Design, Automation & Test in Europe Conference & Exhibition, Dresden, Germany
Mar 23 2018
New York, IEEE
Acknowledgements: The authors wish to acknowledge support from NSF (grant 1644592) and by IMEC core partners CMOS program.
Autres identifiants:

 Notice créée le 2018-08-07, modifiée le 2020-04-20

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