2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

research article

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

•

Matioli, Elison

2018

Applied Physics Letters

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1.5012866.pdf

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openaccess

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1.43 MB

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Adobe PDF

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