A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs
Pezzotta, Alessandro; Jazaeri, Farzan; Bohuslavskyi, Heorhii; Hutin, Louis; Enz, Christian
2018

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Abstract

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified EKV model to FDSOI processes. This will help the designer to find the right trade-off in terms of design parameters, including the back-gate biasing. A comparison with measurement results from a 28-nm FDSOI CMOS process is provided, assessing the excellent accuracy of the proposed.

Details

Title A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs
Author(s) Pezzotta, Alessandro ; Jazaeri, Farzan ; Bohuslavskyi, Heorhii ; Hutin, Louis ; Enz, Christian
Pagination 4
Conference Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada (Spain), March 18-21, 2018
Date 2018
Keywords
Note This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 688539
DOI https://doi.org/10.1109/ULIS.2018.8354764
Additional link IEEE Xplore link to full text
Laboratories ICLAB
Record Appears in Scientific production and competences > EPFL Partners > Neuchâtel Campus > ICLAB - Integrated Circuits Laboratory
Scientific production and competences > STI - School of Engineering > STI Archives > ICLAB - Integrated Circuits Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Record creation date 2018-02-06

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