Details
Title
CSEA
Formal Name (French)
Chaire de simulation à l'échelle atomique
Formal Name (English)
Chair of Atomic Scale Simulation
Lab Manager
Pasquarello, Alfredo
Group ID
U10186
Affiliated authors
Ambrosio, Francesco
Binder, Jan Felix
Bischoff, Thomas
Bouzid, Assil
Broqvist, Peter
Castellino, Tanya
Chen, Wei
Colleoni, Davide
Devynck, Fabien
Falletta, Stefano
Giacomazzi, Luigi
Gono, Patrick
Guo, Zhendong
Hermet, Jessica
Komsa, Hannu-Pekka
Lan, Jinggang
Li, Yawei
Lorin, Arnaud
Lyu, Sai
Ma, Changru
Miceli, Giacomo Francesco Leonardo
Palermo, Giorgio
Pasquarello, Alfredo
Reshetnyak, Igor
Riemelmoser, Stefan
Sclauzero, Gabriele
Tal, Aleksei
Velasquez, Juliana
Wang, Haiyuan
Wiktor, Julia
Yang, Jing
Zhuang, Yongbin
Binder, Jan Felix
Bischoff, Thomas
Bouzid, Assil
Broqvist, Peter
Castellino, Tanya
Chen, Wei
Colleoni, Davide
Devynck, Fabien
Falletta, Stefano
Giacomazzi, Luigi
Gono, Patrick
Guo, Zhendong
Hermet, Jessica
Komsa, Hannu-Pekka
Lan, Jinggang
Li, Yawei
Lorin, Arnaud
Lyu, Sai
Ma, Changru
Miceli, Giacomo Francesco Leonardo
Palermo, Giorgio
Pasquarello, Alfredo
Reshetnyak, Igor
Riemelmoser, Stefan
Sclauzero, Gabriele
Tal, Aleksei
Velasquez, Juliana
Wang, Haiyuan
Wiktor, Julia
Yang, Jing
Zhuang, Yongbin
Institute
IPHYS
Faculty
SB
Note
Members of CSEA-unit
Linked resource
http://csea.epfl.ch/
Publications
Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces
Band alignment atbeta -Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
Comparison between various finite-size supercell correction schemes for charged defect calculations
Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond
First principles study of electronic and structural properties of the Ge/GeO2 interface
Formation of substoichiometric GeOx at the Ge-HfO2 interface
Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles
Intrinsic defects in GaAs and In GaAs through hybrid functional calculations
Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces
The O-As defect in GaAs: A hybrid density functional study
See complete list of publications (380)
Band alignment at
Comparison between various finite-size supercell correction schemes for charged defect calculations
Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond
First principles study of electronic and structural properties of the Ge/GeO2 interface
Formation of substoichiometric GeOx at the Ge-HfO2 interface
Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles
Intrinsic defects in GaAs and In GaAs through hybrid functional calculations
Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces
The O-As defect in GaAs: A hybrid density functional study
See complete list of publications (380)
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