Notice détaillée
Titre
NANOLAB
Formal Name (French)
Laboratoire des dispositifs nanoélectroniques
Formal Name (English)
Nanoelectronic Devices Laboratory
Lab Manager
Ionescu, Mihai Adrian
Cavalieri, Matteo
Cavalieri, Matteo
Group ID
U10328
Auteurs affilié
Abelé, Nicolas
Acquaviva, Donatello
Alper, Cem
Ansari, Ehsan
Bartsch, Sebastian Thimotee
Bazigos, Antonios
Beaud, Patrice
Bellando, Francesco
Ben Jamaa, Mohamed Haykel
Bersano, Fabio
Berthomé, Matthieu
Bhandari, Jyotshna
Biswas, Arnab
Bopp, Matthieu
Boucart, Katherine
Buitrago Godinez, Elizabeth
Buzzi, Isabelle
Cao, Ji
Capua, Luca
Casu, Emanuele Andrea
Cavalieri, Matteo
Chauhan, Yogesh Singh
Ciressan, Nicoleta-Diana
Conti, Vanessa
Crespo Valero, Pedro
Cvetkovic, Nenad
Dagtekin, Nilay
Dainesi, Paolo Giuseppe
Dan, Surya Shankar
De Michielis, Luca
De Schrijver, Lotte Franciska N
Declercq, Michel
Dehghan, Pooya
Ecoffey, Serge
Fazan, Pierre
Fernandez-Bolanos Badia, Montserrat
Fritschi, Raphaël
Gastaldi, Carlotta
Ghini, Michele
Gilani, Ali
Gomez Diaz, Juan Sebastian
Grabinski, Wladyslaw
Guérin, Hoël Maxime
Hermersdorf, Marion
Iaconeta, Andrea
Ionescu, Mihai Adrian
Jaymes, Karin
Kamaei Bahmaei, Sadegh
Karami, Hojjat
Kazanç, Onur
Lattanzio, Livio
Li, Hung-Wei
Mahapatra, Santanu
Martinolli, Niccolò
Masserey, Cyrille
Mazza, Marco
Megally, Esmeralda
Mehdaoui, Alexander
Morel, Pascal
Moridi, Negar
Müller, Andrei
Najmzadeh, Mohammad
O'Connor, Eamon Patrick
Oliva, Nicolò
Padilla de la Torre, José Luis
Park, Daesung
Perruisseau-Carrier, Julien
Pisani, Marcelo Bento
Piwek, Justyna
Pochon, Sandra
Pop, Flavius Vasile
Pott, Vincent
Qaderi Rahaqi, Fatemeh
Rassekh, Amin
Rezaee Fakhr, Shima
Rigante, Sara
Risch, Felix
Rosca, Teodor
Rupakula, Maneesha
Rusu, Alexandru
Saadat Somaehsofla, Zahra
Saeidi, Ali
Salvatore, Giovanni Antonio
Sharma, Pankaj
Sheibani, Shokoofeh
Smajda, Rita
Sprunger, Yann Christophe
Stolichnov, Igor
Sun, Fengda
Varini, Anna
Vitale, Wolfgang Amadeus
Wei, Yingfen
Yakymets, Nataliya
Zhang, Junrui
Ziegler, Dominik
Acquaviva, Donatello
Alper, Cem
Ansari, Ehsan
Bartsch, Sebastian Thimotee
Bazigos, Antonios
Beaud, Patrice
Bellando, Francesco
Ben Jamaa, Mohamed Haykel
Bersano, Fabio
Berthomé, Matthieu
Bhandari, Jyotshna
Biswas, Arnab
Bopp, Matthieu
Boucart, Katherine
Buitrago Godinez, Elizabeth
Buzzi, Isabelle
Cao, Ji
Capua, Luca
Casu, Emanuele Andrea
Cavalieri, Matteo
Chauhan, Yogesh Singh
Ciressan, Nicoleta-Diana
Conti, Vanessa
Crespo Valero, Pedro
Cvetkovic, Nenad
Dagtekin, Nilay
Dainesi, Paolo Giuseppe
Dan, Surya Shankar
De Michielis, Luca
De Schrijver, Lotte Franciska N
Declercq, Michel
Dehghan, Pooya
Ecoffey, Serge
Fazan, Pierre
Fernandez-Bolanos Badia, Montserrat
Fritschi, Raphaël
Gastaldi, Carlotta
Ghini, Michele
Gilani, Ali
Gomez Diaz, Juan Sebastian
Grabinski, Wladyslaw
Guérin, Hoël Maxime
Hermersdorf, Marion
Iaconeta, Andrea
Ionescu, Mihai Adrian
Jaymes, Karin
Kamaei Bahmaei, Sadegh
Karami, Hojjat
Kazanç, Onur
Lattanzio, Livio
Li, Hung-Wei
Mahapatra, Santanu
Martinolli, Niccolò
Masserey, Cyrille
Mazza, Marco
Megally, Esmeralda
Mehdaoui, Alexander
Morel, Pascal
Moridi, Negar
Müller, Andrei
Najmzadeh, Mohammad
O'Connor, Eamon Patrick
Oliva, Nicolò
Padilla de la Torre, José Luis
Park, Daesung
Perruisseau-Carrier, Julien
Pisani, Marcelo Bento
Piwek, Justyna
Pochon, Sandra
Pop, Flavius Vasile
Pott, Vincent
Qaderi Rahaqi, Fatemeh
Rassekh, Amin
Rezaee Fakhr, Shima
Rigante, Sara
Risch, Felix
Rosca, Teodor
Rupakula, Maneesha
Rusu, Alexandru
Saadat Somaehsofla, Zahra
Saeidi, Ali
Salvatore, Giovanni Antonio
Sharma, Pankaj
Sheibani, Shokoofeh
Smajda, Rita
Sprunger, Yann Christophe
Stolichnov, Igor
Sun, Fengda
Varini, Anna
Vitale, Wolfgang Amadeus
Wei, Yingfen
Yakymets, Nataliya
Zhang, Junrui
Ziegler, Dominik
Institut
IEM
Faculté
STI
Note
Members of NANOLAB-unit
Old institute IEL (>2021) Previous institute: IEL (>2021)
Old institute IEL (>2021) Previous institute: IEL (>2021)
Lien extérieur
http://nanolab.epfl.ch/
Publications
A Physical Analysis of High Voltage MOSFET Capacitance Behaviour
AlSi-based Resonant Suspended-Gate MOSFET
Comparison of RSG-MOSFET and capacitive MEMS resonator detection
Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation
Design and Fabrication Issues in Ultra-Thin Film SOI MEMS resonators
Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices
Electro-Mechanical Modeling of MEMS Resonators with MOSFET detection
La récolte d’énergie pour les micro et nanosystèmes autonomes
Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
Tunneling path impact on semi-classical numerical simulations of TFET devices
Voir toutes les publications (609)
AlSi-based Resonant Suspended-Gate MOSFET
Comparison of RSG-MOSFET and capacitive MEMS resonator detection
Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation
Design and Fabrication Issues in Ultra-Thin Film SOI MEMS resonators
Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices
Electro-Mechanical Modeling of MEMS Resonators with MOSFET detection
La récolte d’énergie pour les micro et nanosystèmes autonomes
Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
Tunneling path impact on semi-classical numerical simulations of TFET devices
Voir toutes les publications (609)
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