Details
Title
Zhu, Minghua
Sciper ID
255487
Affiliated labs
POWERLAB
Publications
1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance
900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain
High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
High-performance nanowire-based E-mode Power GaN MOSHEMTs
High-performance normally-off tri-gate GaN power MOSFETs
Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs
Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs
Nanoplasma-enabled picosecond switches for ultrafast electronics
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs
900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain
High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
High-performance nanowire-based E-mode Power GaN MOSHEMTs
High-performance normally-off tri-gate GaN power MOSFETs
Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs
Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs
Nanoplasma-enabled picosecond switches for ultrafast electronics
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs
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