Notice détaillée
Titre
Attari, Behnoush
Sciper ID
252499
Laboratoires affiliés
LSM
Publications
Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories
Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory
Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs
Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM) Electronic Mate[...]
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs
Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions
Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory
Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs
Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM) Electronic Mate[...]
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs
Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions
Employé pour
Attarimashalkoubeh, Behnoush
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