Details
Title
Matioli, Elison
Sciper ID
252123
Affiliated labs
POWERLAB
Publications
A perspective on multi-channel technology for the next-generation of GaN power devices
Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires
Diamond device or structure and method for producing a diamond device or structure
GaN-based power devices: Physics, reliability, and perspectives
High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films
Semiconductor devices with multiple channels and three-dimensional electrodes
p-NiO junction termination extensions for GaN power devices
See complete list of publications (129)
Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires
Diamond device or structure and method for producing a diamond device or structure
GaN-based power devices: Physics, reliability, and perspectives
High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films
Semiconductor devices with multiple channels and three-dimensional electrodes
p-NiO junction termination extensions for GaN power devices
See complete list of publications (129)
Use for
Matioli, E
Matioli, E.
Matioli, Elison de Nazareth
Matioli, E.
Matioli, Elison de Nazareth
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