Notice détaillée
Titre
Saeidi, Ali
Sciper ID
243872
Laboratoires affiliés
NANOLAB
Publications
Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transien[...]
Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs
Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning [...]
Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV
Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and[...]
Voir toutes les publications (25)
Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs
Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning [...]
Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV
Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and[...]
Voir toutes les publications (25)
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