Details
Title
Malinverni, Marco
Sciper ID
185192
Affiliated labs
LASPE
Publications
94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts
GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy
High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers
InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy
Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes
Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions
Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam
W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon
See complete list of publications (12)
GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy
High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers
InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy
Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes
Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions
Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam
W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon
See complete list of publications (12)
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Malinverni, M.
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