Details
Title
Dussaigne, Amélie
Sciper ID
174864
Affiliated labs
LASPE
Publications
Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy
High doping level in Mg-doped GaN layers grown at low temperature
High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
III-nitride High Brightness light-emitting diodes
Les diodes électroluminescentes ultra-brillantes III-Nitrures
Nonlinear emission properties of an optically anisotropic GaN-based microcavity
Radiative lifetime in wurtzite GaN/AIN quantum dots
Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
See complete list of publications (41)
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy
High doping level in Mg-doped GaN layers grown at low temperature
High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
III-nitride High Brightness light-emitting diodes
Les diodes électroluminescentes ultra-brillantes III-Nitrures
Nonlinear emission properties of an optically anisotropic GaN-based microcavity
Radiative lifetime in wurtzite GaN/AIN quantum dots
Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
See complete list of publications (41)
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Dussaigne, A.
Dussaigne, Amelie
Dussaigne, Amelie
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