A CMOS-Compatible, Low-Loss, and Low-Crosstalk Silicon Waveguide Crossing

We demonstrated a waveguide crossing for submicron silicon waveguides with average insertion loss of 0.18±0.03 dB and crosstalk of -41±2 dB, uniform across an 8-inch wafer. The device was fabricated in a CMOS-compatible process using 248 nm lithography, with only one patterning step.


Published in:
IEEE Photonics Technology Letters, 25, 5, 422-425
Year:
2013
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
1941-0174
Laboratories:




 Record created 2017-12-01, last modified 2018-09-13


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