Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. In this work, we fabricated several HfOx ReRAM devices with different structure, material, and thickness, followed by a study of their electrical characteristics under DC biasing. We show an improvement in the switching parameters through engineering of the device structure. Moreover, we demonstrate a certain required thickness for the oxide layer for the ease of oxygen vacancies relocations, thinner oxide layer led to the common ReRAMs performance failure in the low resistance state.


Published in:
Proceedings of the 2017 47th European Solid-State Device Research Conference (ESSDERC), 152-155
Presented at:
2017 47th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, September 11-14, 2017
Year:
2017
Laboratories:




 Record created 2017-11-21, last modified 2018-09-13


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)