Charge-Based Modeling of Symmetric Double-Gate Junction Field-Effect Transistors – Part II: Total Charges and Transcapacitances


Published in:
IEEE Transactions on Electron Devices
Year:
2017
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0018-9383
Laboratories:




 Record created 2017-10-25, last modified 2018-09-13


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