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research article
Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs—Part I: Drain Current and Transconductances
Type
research article
Web of Science ID
WOS:000435546700010
Authors
Publication date
2018
Published in
Volume
65
Issue
7
Start page
2744
End page
2750
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 25, 2017
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