Migration of Mg and other interstitial metal dopants in GaN

The minimumenergy paths for the migration of interstitialMgin wurtziteGaNare studiedthroughdensityfunctional calculations. The study also comprises Li, Na, and Be dopants to examine the dependence on size and charge of the dopant species. In all cases considered, the impurities diffuse like ions without any tendency of localizing charge. Li, Mg, and to some extent Na, diffuse almost isotropically in GaN, with average diffusion barriers of 1.1, 2.1, and 2.5 eV, respectively. Instead Be shows a marked anisotropy with energy barriers of 0.76 and 1.88 eVfor diffusion paths perpendicular and parallel to the c-axis. The diffusion barrier generally increases with ionic charge and ionic radius, but their interplay is not trivial. The calculated migration barrier for Mg is consistent with the values estimated in a recent beta(-) emission channeling experiment. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Published in:
Physica Status Solidi-Rapid Research Letters, 11, 7, 1700081
Year:
2017
Publisher:
Weinheim, Wiley-Blackwell
ISSN:
1862-6254
Keywords:
Laboratories:




 Record created 2017-09-05, last modified 2018-12-03


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