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patent

Ferroelectric film capacitor structure with selective doping

Stolitchnov, Igor
•
Tagantsev, Alexander  
2003

A ferroelectric film capacitor structure (FeCAP), in particular for memory applications, comprises a layer of doped ferroelectric material between facing electrodes having a varying/asymmetric doping profile, the concentration of the dopant in the ferroelectric material varying as a function of the distance from the electrodes. The ferroelectric material can be in particular a perovskite such as (Pb) (Zr,Ti)03 (PZT) and the dopant can be selected from Nb, Ta, La, Sr, Ca or their combinations. Advantageously, the concentration of dopant decreases near one or both interfaces of the ferroelectric material with the electrodes, the concentration of dopant, as a function of the distance from the electrodes, being typically up to 15% by weight of the ferroelectric material.

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Type
patent
EPO Family ID

8174973

Author(s)
Stolitchnov, Igor
Tagantsev, Alexander  
Note

Alternative title(s) : (de) Kondensatorstruktur mit ferroelektrischer schicht mit selektiver dotierung (fr) Structure de condensateur à couche ferroélectrique à dopage sélectif

TTO classification

TTO:6.0214

EPFL units
AVP-R-TTO  
LC  
DOICountry codeKind codeDate issued

EP1271658

EP

A1

2003-01-02

Available on Infoscience
June 13, 2017
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/138366
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