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patent
Group iii nitride light-emitting devices having a polarization-doped region
Carlin, Jean-francois
2006
A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitride region which is compositionally graded for polarization doping.
Type
patent
EPO Family ID
35871060
Inventors
Carlin, Jean-francois
Note
Alternative title(s) : (fr) Dispositifs electroluminescents a base de nitrures du groupe iii presentant une region dopee par polarisation
TTO classification
TTO:6.0507
EPFL units
Patent number | Country code | Kind code | Date issued |
WO2006074916 | WO | A1 | 2006-07-20 |
Available on Infoscience
June 13, 2017
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