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patent
Semiconductor based high resistance
Brauer, Elisabeth
•
Leblebici, Yusuf
2008
The field of invention is in the area of MOS integrated circuits operating with very low currents in the weak inversion region or sub threshold. The method aims at providing linear resistor with a value in the multi-mega ohm range. In order to produce Silicon based high resistance value, the claimed invention provides a semiconductor resistance using MOS transistor comprising a gate, drain, source and body terminals wherein the body terminal is tied to the drain terminal, the voltage applied between the source and the gate defining the resistance value.
Type
patent
EPO Family ID
38293112
Inventors
Brauer, Elisabeth
•
Leblebici, Yusuf
Note
Alternative title(s) : (de) Halbleiterbasierter hoher widerstand (fr) Haute résistance à semi-conducteur
TTO classification
TTO:6.0682
EPFL units
Patent number | Country code | Kind code | Date issued |
EP1976021 | EP | A1 | 2008-10-01 |
Available on Infoscience
June 13, 2017
Use this identifier to reference this record