Single photon detector and associated methods for making the same

A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.


Year:
2010
Other identifiers:
EPO Family ID: 42221995
Laboratories:




 Record created 2017-06-13, last modified 2018-01-27


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