Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon

We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-beta lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.


Published in:
2016 International Semiconductor Laser Conference (Islc)
Presented at:
25th International Semiconductor Laser Conference (ISLC), Kobe, JAPAN, SEP 12-15, 2016
Year:
2016
Publisher:
New York, Ieee
ISSN:
2326-5442
ISBN:
978-4-8855-2306-9
Keywords:
Laboratories:




 Record created 2017-02-17, last modified 2018-09-13


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