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  4. Re-writing scheme for solid-state storage devices
 
patent

Re-writing scheme for solid-state storage devices

Cassuto, Yuval
•
Zhang, Luoming  
•
Shokrollahi, Amin  
2014

A multi-level cell flash memory storage device has cells wherein different charge levels represent different information. The storage device can read stored charge from one or more cells, store a rewrite generation value for a group of a plurality of cells in a block of cells, and write to cells, wherein writing to one or more cells without an erase includes an increment of the rewrite generation value, and includes circuitry for reading from cells, including circuitry for reading the rewrite generation value. The storage device can include circuitry for reading from cells includes within the multi-level cell flash memory storage device logic for calculating a stored value of the cells using the rewrite generation value and relative levels of charge on a plurality of cells. The storage device can track hot addresses and cold addresses and perform static or dynamic wear leveling based on accumulated rewrite generation values.

  • Details
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Type
patent
EPO Family ID

51798235

Author(s)
Cassuto, Yuval
Zhang, Luoming  
Shokrollahi, Amin  
Subjects

algo_pat_electronics

•

flash drives

•

volatile memory

URL

USPTO link

http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=%228879319%22.PN.&OS=PN/
EPFL units
ALGO  
DOICountry codeKind codeDate issued

US8879319

US

B1

2014-11-04

Available on Infoscience
December 15, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/132010
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