Analog and RF Modeling of FDSOI UTBB MOSFET Using Leti-UTSOI Model

Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating regimes including low levels of MOSFET channel inversion. In this paper, Leti-UTSOI based RF model will be compared against electrical measurements from 28nm FDSOI devices operating down to low bias conditions. The outcome demonstrates the accuracy and efficiency of Leti-UTSOI for low-power and RF applications design.


Editor(s):
Napieralski, A
Published in:
Proceedings of The 23rd International Conference on Mixed Design of Integrated Circuits And Systems (Mixdes 2016), 41-46
Presented at:
23rd International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland, June 23-25, 2016
Year:
2016
Publisher:
New York, IEEE
Keywords:
Laboratories:




 Record created 2016-10-18, last modified 2018-01-28


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