Analog and RF Modeling of FDSOI UTBB MOSFET Using Leti-UTSOI Model

• Presented at: 23rd International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland, June 23-25, 2016
• Published in: Proceedings of The 23rd International Conference on Mixed Design of Integrated Circuits And Systems (Mixdes 2016), p. 41-46
• New York: IEEE, 2016

Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating regimes including low levels of MOSFET channel inversion. In this paper, Leti-UTSOI based RF model will be compared against electrical measurements from 28nm FDSOI devices operating down to low bias conditions. The outcome demonstrates the accuracy and efficiency of Leti-UTSOI for low-power and RF applications design.

Keywords: FDSOI ; UTBB ; Leti-UTSOI ; Analog and RF ; Compact Model ; Low-power

Reference

• EPFL-CONF-221914
• View record in Web of Science

Record created on 2016-10-18, modified on 2017-06-02