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  4. In situ photoelectron spectroscopic characterization of reactively sputtered, doped vanadium oxide thin films
 
conference paper

In situ photoelectron spectroscopic characterization of reactively sputtered, doped vanadium oxide thin films

Krammer, A.  
•
Gremaud, A.
•
Bouvard, O.  
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2016
Surface And Interface Analysis
16th European Conference on Applications of Surface and Interface Analysis (ECASIA)

Thin films of pure vanadium oxide (VOx) and Ge doped vanadium oxide (VOx:Ge) have been deposited by reactive magnetron sputtering on Si (100) substrates. These films were characterized by means of in situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy to address the doping induced changes in the core-level and valence-band spectra of the material. Doped films exhibit a decrease in the density of states at the Fermi level, indicating the insulating character of said films compared with the undoped ones. Doped vanadium dioxide is a promising candidate for switchable absorber coatings for solar thermal collectors. Copyright (c) 2016 John Wiley & Sons, Ltd.

  • Details
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Type
conference paper
DOI
10.1002/sia.5989
Web of Science ID

WOS:000379680000011

Author(s)
Krammer, A.  
Gremaud, A.
Bouvard, O.  
Sanjines, R.
Schueler, A.  
Date Issued

2016

Publisher

Wiley-Blackwell

Publisher place

Hoboken

Published in
Surface And Interface Analysis
Total of pages

5

Volume

48

Issue

7

Start page

440

End page

444

Subjects

vanadium oxide thin films

•

in situ XPS

•

Ge doping

•

reactive magnetron sputtering

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LESO-PB  
Event name
16th European Conference on Applications of Surface and Interface Analysis (ECASIA)
Available on Infoscience
October 18, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/129898
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