Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

In this paper, we report a detailed study of the negative capacitance field effect transistor (NCFET). We present the condition for the stabilization of the negative capacitance to achieve the voltage amplification across the active layer. The theory is based on Landauʼs theory of ferroelectrics combined with the surface potential model in all regimes of operation. We demonstrate the validity of the presented theory on experimental NCFETs using a gate stack made of P(VDF-TrFE) and SiO2. The proposed analytical modeling shows good agreement with experimental data.


Published in:
Nanotechnology, 27, 11, 115201
Year:
2016
Publisher:
Institute of Physics
ISSN:
0957-4484
Keywords:
Laboratories:




 Record created 2016-10-17, last modified 2018-12-03

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