Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.


Published in:
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 70-71
Presented at:
2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016
Year:
2016
Publisher:
New York, IEEE
Laboratories:




 Record created 2016-10-14, last modified 2018-03-17


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