Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 mum.


Published in:
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 461-462
Presented at:
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 345 E 47TH ST, NEW YORK, NY 10017 USA
Year:
2004
Publisher:
IEEE
ISBN:
0-7803-8557-8
Note:
17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society, Rio Grande, PR, NOV 07-11, 2004
Laboratories:




 Record created 2016-08-16, last modified 2018-09-13


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