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  4. Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects
 
conference paper

Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects

Helman, NC
•
Roth, JE
•
Altug, H
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2004
The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004
17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society

We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 mum.

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Type
conference paper
DOI
10.1109/LEOS.2004.1363312
Author(s)
Helman, NC
Roth, JE
Altug, H
Miller, DAB
Bour, DP
Date Issued

2004

Publisher

IEEE

Published in
The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004
ISBN of the book

0-7803-8557-8

Series title/Series vol.

IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting

Volume

2

Start page

461

End page

462

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
BIOS  
Event nameEvent placeEvent date
17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society

Rio Grande, PR

NOV 07-11, 2004

Available on Infoscience
August 16, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/128710
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