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conference paper
Advanced power electronic devices based on Gallium Nitride (GaN)
2015
2015 IEEE International Electron Devices Meeting (IEDM)
It is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to significantly increase the reach and impact of power electronics. This paper describes some of the recent advances on developing power devices based on Gallium Nitride (GaN), the key design constrains, and the process to take a new device material and structure from the research laboratory of universities to full commercialization. © 2015 IEEE.
Type
conference paper
Authors
Piedra, Daniel
•
Lu, Bin
•
Sun, Min
•
Zhang, Yuhao
•
•
Gao, Feng
•
Chung, Jinwook Will
•
Saadat, Omair
•
Xia, Ling
•
Azize, Mohamed
Publication date
2015
Publisher
Published in
2015 IEEE International Electron Devices Meeting (IEDM)
Start page
16.6.1
End page
16.6.4
Peer reviewed
NON-REVIEWED
EPFL units
Event name | Event place | Event date |
Washington, DC, USA | 7-9 December 2015 | |
Available on Infoscience
April 28, 2016
Use this identifier to reference this record