GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth
We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned GaN template. Overgrowth, coalescence, and epitaxial growth of the pn junction within a thickness of 500 nm is obtained using metal-organic chemical vapor deposition. This design strongly modifies the distribution of guided modes, as confirmed by angle-resolved measurements. The regime of operation and potential efficiency of such structures are discussed. (c) 2008 American Institute of Physics.
Record created on 2016-03-17, modified on 2016-08-09