Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by the etching process, while photoluminescence measurements show extracted modes emitted from the quantum wells which agree well with modeling. A light extraction improvement of 1.8 times is measured using this noninvasive PhC.


Published in:
Applied Physics Letters, 94, 2, 023101
Year:
2009
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2016-03-17, last modified 2018-03-17


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