Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal
A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by the etching process, while photoluminescence measurements show extracted modes emitted from the quantum wells which agree well with modeling. A light extraction improvement of 1.8 times is measured using this noninvasive PhC.
Keywords: etching ; gallium compounds ; III-V semiconductors ; light emitting diodes ; nanolithography ; nanopatterning ; photoluminescence ; photonic crystals ; semiconductor quantum wells ; semiconductor thin films ; soft lithography ; titanium compounds ; wide band gap semiconductors
Record created on 2016-03-17, modified on 2016-08-09