High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH3-based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorption measurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (< 365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3575563]


Published in:
Applied Physics Letters, 98, 13, 131115
Year:
2011
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Laboratories:




 Record created 2016-03-17, last modified 2018-09-13


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)