Tri-Gate Normally-Off GaN Power MISFET

We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field-effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a drain leakage current of 0.6 mu A/mm and V-gs = 0. The new device has an on/off current ratio of more than eight orders of magnitude and a subthreshold slope of 86 +/- 9 mV/decade. The threshold voltage of the new device is 0.80 +/- 0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.


Published in:
IEEE Electron Device Letters, 33, 3, 360-362
Year:
2012
Publisher:
Piscataway, Ieee-Inst Electrical Electronics Engineers Inc
ISSN:
0741-3106
Keywords:
Laboratories:




 Record created 2016-03-17, last modified 2018-09-13


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