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research article
Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes
2015
We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As-4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are obtained for pitches around 0.7-1 mu m and a gallium rate of 1 angstrom s(-1). The functionality of the membranes is further illustrated by the growth of quantum heterostructures (such as quantum wells) and the characterization of their optical properties at the nanoscale. This proves the potential of nanoscale membranes for optoelectronic applications.
Type
research article
Web of Science ID
WOS:000365203000014
Authors
Tutuncuoglu, G.
•
De La Mata, M.
•
•
Potts, H.
•
Matteini, F.
•
Arbiol, J.
•
Publication date
2015
Publisher
Published in
Volume
7
Issue
46
Start page
19453
End page
19460
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
February 16, 2016
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