Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

In this work we present an ultra-high-frequency (UHF) single crystal silicon ring resonator with two embedded FETs. Electromechanical coupling is realized through a high-K, namely 10 nm HfO2, dielectric solid-gap sandwiched between the gate electrode and the ring lateral surface. The higher permittivity of the solid-gap material as well as the technological possibility of having narrower gap than air-gap counterparts, will uniquely allow to improve at the same time the electromechanical coupling and the FET amplifcation by increasing the gate capacitance.

Presented at:
40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014

 Record created 2016-02-03, last modified 2018-03-17

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