Nonstoichiometric Low-Temperature Grown GaAs Nanowires
The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth of nonstoichiometric GaAs shells is achieved through the formation of As antisite defects, and to a lower extent, after annealing, As precipitates. Because of the high density of atomic steps on the nanowire sidewalls, the Fermi level is pinned midgap, causing the ionization of the subsurface antisites and the formation of depleted regions around the As precipitates. Controlling their incorporation offers a way to obtain unique electronic and optical properties that depart from the ones found in conventional GaAs nanowires.
non-stoichiometricGaAsNWs2015.pdf
Publisher's version
openaccess
3.75 MB
Adobe PDF
e0075fa8d5ad607c80dcdd7c57bfd6e7
PermissionWebNon-stoichiometricLTGaAsNWs.png
restricted
126.39 KB
PNG
bd340189c2ed8b7a15a09999364cd0fb