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  4. Cracking the Si Shell Growth in Hexagonal GaP-Si Core-Shell Nanowires
 
research article

Cracking the Si Shell Growth in Hexagonal GaP-Si Core-Shell Nanowires

Conesa-Boj, S.  
•
Hauge, H. I. T.
•
Verheijen, M. A.
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2015
Nano Letters

Semiconductor nanowires have increased the palette of possible heterostructures thanks to their more effective strain relaxation. Among these core shell heterostructures are much more sensitive to strain than axial Ones. It is now accepted that the formation of misfit dislocations depends both oh the lattice mismatch and relative dimensions of the core and the shell. Here, we show for the first time the existence of a new kind of defect in core shell nanowires: cracks. These defects do not originate from a lattice mismatch,(we demonstrate their appearance in an essentially zero-mismatch system) but from the thermal history during the growth of the nanowires. Crack defects lead to the development of secondary defects, such as type-I-1, stacking faults and Frank-type dislocations. These results provide crucial information with important implications for the optimized synthesis of nanowire-based core-shell heterostructures.

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Type
research article
DOI
10.1021/nl504813e
Web of Science ID

WOS:000354906000031

Author(s)
Conesa-Boj, S.  
Hauge, H. I. T.
Verheijen, M. A.
Assali, S.
Li, A.
Bakkers, E. P. A. M.
Fontcuberta I Morral, A.  
Date Issued

2015

Publisher

American Chemical Society

Published in
Nano Letters
Volume

15

Issue

5

Start page

2974

End page

2979

Subjects

MOVPE

•

core-shell heterostructures

•

thermal history

•

crack defect

•

Frank-type dislocation

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LMSC  
Available on Infoscience
September 28, 2015
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/119435
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