Thin-layer black phosphorous/GaAs heterojunction p-n diodes

Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface. (C) 2015 AIP Publishing LLC.


Published in:
Applied Physics Letters, 106, 23, 233110
Year:
2015
Publisher:
Melville, Amer Inst Physics
ISSN:
0003-6951
Laboratories:




 Record created 2015-09-28, last modified 2018-03-17


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