Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based model, are validated with technology computer-aided design simulations, and the figures of merit have been compared with the inversion mode FETs. For a given current, we found that the channel thermal noise is very similar for both architectures, whereas the IGN is slightly decreased in the JL FETs.


Published in:
IEEE Transactions On Electron Devices, 62, 8, 2593-2597
Year:
2015
Publisher:
Piscataway, Ieee-Inst Electrical Electronics Engineers Inc
Keywords:
Laboratories:




 Record created 2015-09-28, last modified 2018-01-28


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