22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 degrees C-often needed for the curing of printed metal contacts-detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%. (C) 2015 AIP Publishing LLC.


Published in:
Applied Physics Letters, 107, 8, 081601
Year:
2015
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Note:
IMT-Number : 824
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2015-09-28, last modified 2018-03-17

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