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research article
Role of the gate in ballistic nanowire SOI MOSFETs
In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting the similarities and differences between ballistic devices of 10 nm and 100 nm channel length, in an attempt to understand the electrostatics in a ballistic channel, especially the influence of the gate, source and drain terminals on the channel. (C) 2015 Elsevier Ltd. All rights reserved.
Type
research article
Web of Science ID
WOS:000358970000005
Authors
Publication date
2015
Publisher
Published in
Volume
112
Start page
24
End page
28
Peer reviewed
REVIEWED
Available on Infoscience
September 28, 2015
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