Multiple-junction photoelectric device and its production process
The present invention relates to a multiple-junction photoelectric device comprising, in sequence, a substrate (4), a first conducting layer (2), at least two elementary photoelectric devices (6, 10), at least one of said elementary photoelectric devices (6) being made of microcrystalline silicon, and a second conducting layer (8). The first conducting layer (2) has a surface (2b) facing said microcrystalline silicon elementary photoelectric device such that: - said surface (2b) has a lateral feature size (D) bigger than 100 nm, and a root-means-square roughness (Rrms) bigger than 40 nm, - said surface (2b) comprises inclined elementary surfaces such that a50 is greater than 20 DEG , where aso is the angle for which 50% of the elementary surfaces of the surface of the first conducting layer (2) have an inclination equal to or less than this angle, and - said surface (2b) comprises valleys being formed between two elementary surfaces and having a radius of curvature smaller than 100 nm. Moreover, said microcrystalline silicon elementary photoelectric device (6) comprises, on the incoming light side, a p-type layer being made of at least one silicon alloy SiMx where M is O, C, N, and x> 0.1, said p-type layer containing silicon grains.
43567779
IMT-NE Number: 800
Alternative title(s) : (de) Photoelektrische vorrichtung mit mehreren verbindungselementen und herstellungsverfahren dafür (fr) Dispositif photoélectrique à jonction multiple et son procédé de production
TTO:6.0995
Patent number | Country code | Kind code | Date issued |
CN103238218 | CN | B | 2016-07-27 |
US9337367 | US | B2 | 2016-05-10 |
EP2599127 | EP | B1 | 2014-08-13 |
CN103238218 | CN | A | 2013-08-07 |
US2013146131 | US | A1 | 2013-06-13 |
EP2599127 | EP | A2 | 2013-06-05 |
WO2012013428 | WO | A3 | 2012-06-07 |
WO2012013428 | WO | A2 | 2012-02-02 |
EP2413373 | EP | A1 | 2012-02-01 |