A Surface Potential and Current Model for Polarity-Controllable Silicon Nanowire FETs

Silicon nanowire FET (SiNWFET) with dynamic polarity control has been experimentally demonstrated and has shown large potential in circuit applications. To fully explore its circuit-level opportunities, a physics-based compact model of the polarity-controllable SiNWFET is required. Therefore, in this paper, we extend the solution for conventional SiNWFETs to polarity-controllable SiNWFETs. By solving the current continuity equation, the potential distribution and drain current is obtained. The model shows good aoreement with TCAD simulation. It can be used as the core to develop the complete compact model for polarity-controllable SiNWFETs.


Published in:
Proceedings of the 45th European Solid-State Device Conference (ESSDERC)
Presented at:
45th European Solid-State Device Conference (ESSDERC), Graz, Austria, September 14-18, 2015
Year:
2015
ISBN:
978-1-4673-7133-9
Laboratories:




 Record created 2015-09-08, last modified 2018-03-17

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