Low-frequency noise in pseudomorphically grown In0.52Al0.48As/In0.7Ga0.3As/InP HEMTS as a function of channel thickness

Low-frequency drain-current noise in pseudomorphic InAlAs/InGaAs/InP HEMTs has been studied at low drain bias as a function of the InGaAs pseudomorphic channel thickness. The 1/f noise at 77 K, quantified through the Kooge's empirical parameter alpha(ch), was found to be strongly dependent on the 2DEG concentration n(s) and correlated to the reciprocal mobility 1/mu. alpha(ch) was found to strongly increase at high channel thicknesses. Noise spectra analysis as a function of temperature reveals two traps with activation energies of 0.33 and 0.39 eV.


Published in:
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 35-38
Presented at:
14th International Conference on Noise in Physical Systems and l/f Fluctuations (ICNF 97), LOUVAIN (LEUWEN), BELGIUM, JUL 14-18, 1997
Year:
1997
Laboratories:




 Record created 2015-08-31, last modified 2018-03-17


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