Low-frequency Noise Characterization of Dry-etched and Wet-etched InAlAs/InGaAs HEMTs
1997
Résumé
Low-frequency noise (LFN) characteristics of dry-and wet-etched InAlAs/InGaAs HEMTS have been studied. It is found that due to passivation of deep traps by hydrogen the excess LFN (1/f and G-R) in dry-etched HEMTs is significantly lower than in wet-etched devices. All the traps as detected by LFN were found to be located in the InAlAs barrier layer.
Détails
Titre
Low-frequency Noise Characterization of Dry-etched and Wet-etched InAlAs/InGaAs HEMTs
Auteur(s)
Ren, L. ; Duran, H.C. ; Beck, M. ; Py, M.A. ; Ilegems, Marc
Publié dans
Noise in Physical Systems and 1/f fluctuations
Editeur(s)
Pages
27-30
Présenté à
14th International Conference on Noise in Physical Systems and 17f fluctuations (ICNF 97), Louvain (Leuwen) , Belgium, Jul. 14-18, 1997
Date
1997
Laboratoires
LOEQ
Le document apparaît dans
Production scientifique et compétences > SB - Faculté des sciences de base > SB Archives > LOEQ - Laboratoire d'optoélectronique quantique
Papiers de conférence
Travail produit à l'EPFL
Publié
Papiers de conférence
Travail produit à l'EPFL
Publié
Date de création de la notice
2015-08-31